晶面

双语例句

Etching silicon tips in anisotropic KOH solution has the advantages of simple, easy to handle, low cost and homogeneous etching rate of ( 100) crystal plane on a whole wafer. 各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点。

On the basis of dendrite arm alignment on the intersection plane, traces of a known crystal plane were made on the alloy surfaces. 根据枝晶臂截面排列方向作已知晶面在合金表面上的痕迹,由此确定铸造合金的晶体位向及定向切割线。

A probe-hole field emission microscope system controlled by the Apple H computer has been developed and operated successfully for measuring work function of single crystal plane. 由AppleⅡ微机控制的探孔场发射显微镜系统已研制成功,并可用其测量单个晶面的逸出功。

The structure of plasma electrode Pockels cell ( PEPC) has been researched totally through the electrical views for the first time. The basic principles for largely aperture PEPC with thinness crystal plane have been expounded. *从电学的角度系统研究了等离子电光开关的结构问题,论述了等离子体电极普克尔盒能够利用薄KDP(KDP)晶体片实现大口径制作的原理。

Using X ray diffractometer to measure crystal plane space of calcium-montmorillonite soaked by clay stabilizing agents with different concentrations, then optimal used concentration of the clay stabilizing agent was ascertained; 即用X射线衍射仪测定经不同浓度的粘土稳定剂浸泡过的Ca蒙脱石的晶面间距,确定粘土稳定剂*的使用浓度;

Study on the Surface Mobility of Atoms on the Single Crystal Plane of Metal by the Field Emission Fluctuation Method 用场发射涨落法研究原子在金属单晶面上的表面扩散

Both Laue equation method and crystal plane figure method have not been found in the published papers. 三种方法中,Laue方程法和直观晶面图形归纳法是文献上所未见过的。

The influence of elastic anisotropy of material on the shear angle is studyed systematically in this paper. The fluctuation law of the cutting force and the shear angle with the changes of cutting crystal plane and cutting orientation is given by calculating theoretically. 本文系统研究了材料的弹性各向异性对剪切角的影响,并在理论上计算出了剪切角随加工晶面、加工方位的波动规律。

Examined in this study is the variation of crystallinity and crystal plane size of water_swelled cellulose ⅰ treated by microwave. 考察了水润胀的纤维素Ⅰ经微波处理后结晶度、晶区尺寸的变化。

The experiment has proved that in silicon bearing heat resisting nodular iron some amount of hydrogen are spontaneously dissolved into α Fe with silicon, and the segregation of hydrogen on crystal plane causes brittleness. 试验结果表明,铸态硅系耐热球铁固溶了*数量的*,它随硅原子溶入α-Fe而自发溶入,并在某些晶面形成偏析、导致*脆。

For some powder materials with regular crystalline form, their smooth crystal plane can be analyzed directly. 某些结晶形状规则的粉末材料可直接对其平整的晶面进行分析。

According to the transnational periodically symmetry of crystal plane in its space, the author introduce the Thomas-Fermi equation in crystal planar channeling electric fields; then calculate the electric fields of single crystal Si ( 110) and its critical angle. 根据同一晶向的晶面具有平移周期对称性,将托马斯费米方程引入晶体的平面沟道中求解Si(110)平面沟道内的电场;

In this paper, relations between the Eulerian angles ε, γ, ψ, of a rotation-cut crystal plate and its indices of crystal plane are deduced, thus providing the bases and methods for cutting and orientating of actual crystal plate in the electro-acoustic technique. 本文导出了各种旋转切割晶片欧拉角εγψ与晶片表面结晶面网指数hkl的关系,为电声应用中实际晶片的切割与定向提供了方法和依据。

A method for processing data in automatic measuring of crystal plane angle 晶面角自动测量中的数据处理

The defect microstructures such as the stacking faults, ( 100) deformed twins, domain structures, intersecting gliding of the crystal plane and the boundaries, as well as the lattice distortion in minerals of eclogite demonstrate the rapid exhumation of UHP rocks. 在榴辉岩矿物中广泛发育的层错、(100)变形双晶、晶畴结构、界面与晶面的交叉滑移、晶格畸变等变形构造及缺陷结构,指示超高压岩石经历了快速折返。

The addition of saccharin could reduce the preferred orientation of nickel coatings crystal plane ( 200); 糖精的加入可使镍涂层(200)晶面的择优取向**;

Measurement method of crystal plane bow in single crystal silicon by X-ray 测量单晶硅片晶面弯曲的X射线方法

The paper in the theory have been calculated GaAs/ Si heterostructures epitaxy on ( 211) Si crystal plane, which density is smaller than other. 从理论上计算出GaAs/Si异质结在Si的(211)面上界面态密度*,故GaAs在Si(211)面上生长晶格失配度较小。

This paper points out and corrects some wrong data of planar multiplicity factor for X-ray powder diffraction in many books concerning X-ray diffraction according to the definition of crystal plane group, Miller indices and planar multiplicity factor. 本文从晶面族,晶面指数和多重性因数的原始定义出发,指出目前的大多数有关X光衍射的论著中所给出的粉末衍射的多重性因数的数据存在错误,并予以了更正。

A method to determine the mean spiral angle ( commonly called microfibril angle) of cotton fibre secondary walls from the spread of the ( 002) crystal plane arcs in X-ray diffraction diagram is proposed. 本文阐述应用X射线(002)面衍射弧测定棉纤维次生胞壁平均螺旋角(又称微纤丝角)的方法。

When incident plane and crystal plane are the planes of principal dielectric axis of crystal and ray is perpendicular incidence, the formulas for direction of refractive rays are obtained. 当入射面和晶面是晶体的主介电轴平面和光为正入射时,给出折射光线方向的公式。

Results show that when experiments were performed on the preferred crystal plane { 001}, crystallographic orientation of the cladding layer is identical with that of the substrate. 研究表明,当实验在基材的择优晶面{001}上进行,涂层的组织为定向凝固柱状晶,晶体取向与基材的晶体取向相一致,一次间距约为10μm,二次臂退化。

The orientation characteristic on the main crystal plane was analyzed. 分析了主要晶面上的取向特点。

A method of calculating crystal plane spacing in centered cubic structure is proposed, and several examples are given to verify the validity of this method. 提出了一种计算有心立方结构面间距的方法,并给出了几个简单算例。

We find that the spin-coated seed layer as the growth units of zinc oxide nanorods directly leads the zinc oxide to grow along the ( 002) crystal plane; precursor solution concentration and growth time exert great influence on crystallinity and photoluminescent properties. 我们发现,旋涂种子层作为氧化锌*棒的生长基元,直接决定了氧化锌沿(002)晶面取向性生长;前躯体溶液浓度和生长时间对其结晶度和发光特性有影响。

In different sputtering conditions, the prepared ZnO: Al thin film were hexagonal wurtzite polycrystalline structure and showed an oriented film growth, with the crystallographic c-axis along ( 002) crystal plane perpendicular to the substrate surface. 在不同溅射条件下,制备的ZnO:Al薄膜为六方铅锌矿多晶结构并沿c轴(002)垂直于衬底表面择优取向性生长。

Effects of the liquid structural change on crystallization orientation were investigated. It is found that the melt after the liquid structural change preferably grew on the high index crystal plane with the solidification process, which was responsible for the branching of low index single crystal plane. 液-液结构转变对晶体生长取向的影响主要是随凝固长度增加,液-液结构转变使合金实现高指数晶面取向,加剧了低指数晶面分支现象。

The results of testing show that the silicon ( 111) crystal plane is very smoothing by etching method. 测试结果表明,利用腐蚀方法得到的硅的(111)晶面周期结构平整光滑。